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30 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DSN1006-3 (SOT8026) Surface-Mounted Device (SMD) package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Package / Case | Technology | Gate Charge (Qg) (Max) @ Vgs | FET Type | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Max] | Operating Temperature [Min] | Vgs(th) (Max) @ Id | Vgs (Max) | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Power Dissipation (Max) | Supplier Device Package | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 3-XFDFN | MOSFET (Metal Oxide) | 7.5 nC | N-Channel | Surface Mount | 3.5 A | 150 °C | -55 °C | 1.1 V | 12 V | 30 V | 420 pF | 1.8 V | 4.5 V | 7 W 480 mW | DSN1006-3 | 55 mOhm |