SIS330 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 30V 35A PPAK1212-8
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Mounting Type | Technology | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 35 nC | 30 V | 1300 pF | 3.7 W 52 W | 20 V | 35 A | 2.5 V | Surface Mount | MOSFET (Metal Oxide) | -55 °C | 150 °C | N-Channel | PowerPAK® 1212-8 | 4.5 V 10 V | 5.6 mOhm | PowerPAK® 1212-8 |