BUK9M Series
Manufacturer: Freescale Semiconductor - NXP
MOSFET 2N-CH 65V 11.6A 20SO
| Part | Mounting Type | Configuration | Vgs(th) (Max) @ Id | FET Feature | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Package / Case | Package / Case [y] | Package / Case [y] | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Technology | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Power - Max [Max] | Power - Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Freescale Semiconductor - NXP | Surface Mount | 2 N-Channel (Dual) | 2 V | Logic Level Gate | 2660 pF | 15.5 mOhm | 20-SOIC | 0.295 in | 7.5 mm | 30.8 nC | 20-SO | MOSFET (Metal Oxide) | 65 V | -55 °C | 150 °C | 11.6 A | ||
Freescale Semiconductor - NXP | Surface Mount | 2 N-Channel (Dual) | 2 V | Logic Level Gate | 535 pF | 90.4 mOhm | 20-SOIC | 0.295 in | 7.5 mm | 6.3 nC | 20-SO | MOSFET (Metal Oxide) | 65 V | -55 °C | 150 °C | 3.8 A | 3.15 W | |
Freescale Semiconductor - NXP | Surface Mount | 2 N-Channel (Dual) | 2 V | Logic Level Gate | 3643 pF | 10.6 mOhm | 20-SOIC | 0.295 in | 7.5 mm | 44.6 nC | 20-SO | MOSFET (Metal Oxide) | 65 V | -55 °C | 150 °C | 15 A | 5 W | |
Freescale Semiconductor - NXP | Surface Mount | 2 N-Channel (Dual) | 2 V | Logic Level Gate | 9 mOhm 22.6 mOhm | 20-SOIC | 0.295 in | 7.5 mm | 20-SO | MOSFET (Metal Oxide) | 55 V | -55 °C | 150 °C | 9.16 A 16.9 A | 3.9 W 5.2 W | |||
Freescale Semiconductor - NXP | Surface Mount | 2 N-Channel (Dual) | Logic Level Gate | 20-SOIC | 0.295 in | 7.5 mm | 20-SO | MOSFET (Metal Oxide) | 55 V |