QS8J5 Series

4V Drive Pch+Pch MOSFET

Catalog

4V Drive Pch+Pch MOSFET

Part	Supplier Device Package	Power - Max [Max]	Drain to Source Voltage (Vdss)	Operating Temperature	Mounting Type	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Technology	FET Feature
Rohm Semiconductor QS8J5TR	TSMT8	600 mW	30 V	150 °C	Surface Mount	2.5 V	19 nC	5 A	2 P-Channel	1100 pF	39 mOhm	MOSFET (Metal Oxide)	Logic Level Gate

Catalog

4V Drive Pch+Pch MOSFET

Description

Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.