SI6969 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET 2P-CH 12V 8TSSOP
| Part | Technology | FET Feature | Rds On (Max) @ Id, Vgs | Supplier Device Package | Package / Case | Package / Case [custom] | Package / Case [custom] | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Drain to Source Voltage (Vdss) | Power - Max [Max] | Configuration | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | Logic Level Gate | 34 mOhm | 8-TSSOP | 8-TSSOP | 0.173 " | 4.4 mm | 450 mV | 40 nC | Surface Mount | 12 V | 1.1 W | 2 P-Channel | -55 °C | 150 °C | ||
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | Logic Level Gate | 30 mOhm | 8-TSSOP | 8-TSSOP | 0.173 " | 4.4 mm | 800 mV | Surface Mount | 12 V | 830 mW | 2 P-Channel | -55 °C | 150 °C | 4 A | 25 nC | |
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | Logic Level Gate | 34 mOhm | 8-TSSOP | 8-TSSOP | 0.173 " | 4.4 mm | 450 mV | 40 nC | Surface Mount | 12 V | 1.1 W | 2 P-Channel | -55 °C | 150 °C |