XPW6R30ANB Series

Catalog

12V - 300V MOSFETS, N-CH MOSFET, 100 V, 45 A, 0.0063 Ω@10V, DSOP ADVANCE(WF)M

Part	Power Dissipation (Max)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Qualification	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Grade	Vgs (Max)	Supplier Device Package	Operating Temperature	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Drain to Source Voltage (Vdss)	Technology
Toshiba Semiconductor and Storage XPW6R30ANB,L1XHQ	960 mW	132 W	3.5 V	AEC-Q101	45 A	Surface Mount	Automotive	20 V	8-DSOP Advance	175 °C	8-PowerVDFN	52 nC	6.3 mOhm	6 V 10 V	3240 pF	N-Channel	100 V	MOSFET (Metal Oxide)