FQB33N10L Series

Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 33 A, 52 mΩ, D2PAK

Catalog

Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 33 A, 52 mΩ, D2PAK

Part	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	FET Type	Supplier Device Package	Power Dissipation (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]
ON Semiconductor FQB33N10TM	1500 pF	10 V	MOSFET (Metal Oxide)	25 V	100 V	52 mOhm	51 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	175 ░C	4 V	N-Channel	TO-263 (D2PAK)	3.75 W 127 W	Surface Mount	33 A
ON Semiconductor FQB33N10LTM	1630 pF		MOSFET (Metal Oxide)	20 V	100 V	52 mOhm		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	175 ░C	2 V	N-Channel	TO-263 (D2PAK)	3.75 W 127 W	Surface Mount	33 A	40 nC	10 V	5 V

Catalog

Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 33 A, 52 mΩ, D2PAK

Key Features

• 33A, 100V, RDS(on)= 52mΩ(Max.) @VGS= 10 V, ID= 16.5A

• Low gate charge ( Typ. 30nC)

• Low Crss( Typ. 70pF)

• 100% avalanche tested

• 175°C maximum junction temperature rating

Description

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.