IRFZ48 Series

Catalog

MOSFET N-CH 60V 50A TO220AB

Part	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Mounting Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs (Max)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division IRFZ48R	60 V	MOSFET (Metal Oxide)	50 A	18 mOhm	Through Hole	TO-220AB	110 nC	4 V	190 W	10 V	2400 pF	TO-220-3	20 V	N-Channel	-55 °C	175 ░C
Vishay General Semiconductor - Diodes Division IRFZ48RSPBF	60 V	MOSFET (Metal Oxide)	50 A	18 mOhm	Surface Mount	TO-263 (D2PAK)	110 nC	4 V	190 W	10 V	2400 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	N-Channel	-55 °C	175 ░C
Vishay General Semiconductor - Diodes Division IRFZ48SPBF	60 V	MOSFET (Metal Oxide)	50 A	18 mOhm	Surface Mount	TO-263 (D2PAK)	110 nC	4 V		10 V	2400 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	N-Channel	-55 °C	175 ░C	3.7 W 190 W
Vishay General Semiconductor - Diodes Division IRFZ48L	60 V	MOSFET (Metal Oxide)	50 A	18 mOhm	Through Hole	TO-262-3	110 nC	4 V		10 V	2400 pF	I2PAK TO-262-3 Long Leads TO-262AA	20 V	N-Channel	-55 °C	175 ░C	3.7 W 190 W
Vishay General Semiconductor - Diodes Division IRFZ48RPBF	60 V	MOSFET (Metal Oxide)	50 A	18 mOhm	Through Hole	TO-220AB	110 nC	4 V	190 W	10 V	2400 pF	TO-220-3	20 V	N-Channel	-55 °C	175 ░C