IS46TR16128 Series
Manufacturer: ISSI, Integrated Silicon Solution Inc
IC DRAM 2GBIT PARALLEL 96TWBGA
| Part | Memory Type | Memory Format | Supplier Device Package | Memory Size | Technology | Package / Case | Memory Interface | Clock Frequency | Voltage - Supply [Min] | Voltage - Supply [Max] | Write Cycle Time - Word, Page | Memory Organization | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Access Time | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solution Inc | Volatile | DRAM | 96-TWBGA (9x13) | 2 Gbit | SDRAM - DDR3L | 96-TFBGA | Parallel | 800 MHz | 1.283 V | 1.45 V | 15 ns | 128M x 16 | Surface Mount | -40 °C | 105 °C | 20 ns | ||
ISSI, Integrated Silicon Solution Inc | Volatile | DRAM | 96-TWBGA (9x13) | 2 Gbit | SDRAM - DDR3L | 96-TFBGA | Parallel | 800 MHz | 1.283 V | 1.45 V | 15 ns | 128M x 16 | Surface Mount | -40 °C | 95 °C | 20 ns | ||
ISSI, Integrated Silicon Solution Inc | Volatile | DRAM | 96-TWBGA (9x13) | 2 Gbit | SDRAM - DDR3 | 96-TFBGA | Parallel | 800 MHz | 1.283 V | 1.45 V | 15 ns | 128M x 16 | Surface Mount | -40 °C | 105 °C | 20 ns | ||
ISSI, Integrated Silicon Solution Inc | Volatile | DRAM | 96-TWBGA (9x13) | 2 Gbit | SDRAM - DDR3 | 96-TFBGA | Parallel | 800 MHz | 1.425 V | 1.575 V | 15 ns | 128M x 16 | Surface Mount | -40 °C | 95 °C | 20 ns | ||
ISSI, Integrated Silicon Solution Inc | Volatile | DRAM | 96-TWBGA (9x13) | 2 Gbit | SDRAM - DDR3L | 96-TFBGA | Parallel | 800 MHz | 1.283 V | 1.45 V | 15 ns | 128M x 16 | Surface Mount | -40 °C | 105 °C | 20 ns | ||
ISSI, Integrated Silicon Solution Inc | Volatile | DRAM | 96-TWBGA (9x13) | 2 Gbit | SDRAM - DDR3 | 96-TFBGA | Parallel | 800 MHz | 1.283 V | 1.45 V | 15 ns | 128M x 16 | Surface Mount | -40 °C | 105 °C | 20 ns | ||
ISSI, Integrated Silicon Solution Inc | Volatile | DRAM | 96-TWBGA (9x13) | 2 Gbit | SDRAM - DDR3 | 96-TFBGA | Parallel | 667 MHz | 1.283 V | 1.45 V | 15 ns | 128M x 16 | Surface Mount | -40 °C | 105 °C | 20 ns | ||
ISSI, Integrated Silicon Solution Inc | Volatile | DRAM | 96-TWBGA (9x13) | 2 Gbit | SDRAM - DDR3 | 96-TFBGA | Parallel | 800 MHz | 1.425 V | 1.575 V | 15 ns | 128M x 16 | Surface Mount | -40 °C | 115 °C | 20 ns | Automotive | AEC-Q100 |
ISSI, Integrated Silicon Solution Inc | Volatile | DRAM | 96-TWBGA (9x13) | 2 Gbit | SDRAM - DDR3 | 96-TFBGA | Parallel | 800 MHz | 1.425 V | 1.575 V | 15 ns | 128M x 16 | Surface Mount | -40 °C | 105 °C | 20 ns | ||
ISSI, Integrated Silicon Solution Inc | Volatile | DRAM | 96-TWBGA (9x13) | 2 Gbit | SDRAM - DDR3L | 96-TFBGA | Parallel | 800 MHz | 1.283 V | 1.45 V | 15 ns | 128M x 16 | Surface Mount | -40 °C | 115 °C | 20 ns | Automotive | AEC-Q100 |