SQM60030 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 80V 120A D2PAK
| Part | Vgs(th) (Max) @ Id | Supplier Device Package | Mounting Type | Drain to Source Voltage (Vdss) | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) [Max] | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | Grade | Current - Continuous Drain (Id) @ 25°C | Qualification | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 3.5 V | TO-263 (D2PAK) | Surface Mount | 80 V | N-Channel | 10 V | 20 V | 375 W | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 165 nC | Automotive | 120 A | AEC-Q101 | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 12000 pF | 3.2 mOhm |