BYT51 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 50V 1.5A SOD57
| Part | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) [Max] | Mounting Type | Speed | Speed | Reverse Recovery Time (trr) | Supplier Device Package | Technology | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 175 ░C | -55 C | 1 µA | 50 V | Through Hole | Standard Recovery >500ns | 200 mA | 4 µs | SOD-57 | Avalanche | 1.5 A | 1.1 V | Axial SOD-57 |
Vishay General Semiconductor - Diodes Division | 175 ░C | -55 C | 1 µA | 800 V | Through Hole | Standard Recovery >500ns | 200 mA | 4 µs | SOD-57 | Avalanche | 1.5 A | 1.1 V | Axial SOD-57 |
Vishay General Semiconductor - Diodes Division | 175 ░C | -55 C | 1 µA | 50 V | Through Hole | Standard Recovery >500ns | 200 mA | 4 µs | SOD-57 | Avalanche | 1.5 A | 1.1 V | Axial SOD-57 |
Vishay General Semiconductor - Diodes Division | 175 ░C | -55 C | 1 µA | 200 V | Through Hole | Standard Recovery >500ns | 200 mA | 4 µs | SOD-57 | Avalanche | 1.5 A | 1.1 V | Axial SOD-57 |
Vishay General Semiconductor - Diodes Division | 175 ░C | -55 C | 1 µA | 400 V | Through Hole | Standard Recovery >500ns | 200 mA | 4 µs | SOD-57 | Avalanche | 1.5 A | 1.1 V | Axial SOD-57 |
Vishay General Semiconductor - Diodes Division | 175 ░C | -55 C | 1 µA | 600 V | Through Hole | Standard Recovery >500ns | 200 mA | 4 µs | SOD-57 | Avalanche | 1.5 A | 1.1 V | Axial SOD-57 |