SI4890 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 30V 11A 8-SOIC
| Part | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Package / Case | Package / Case [y] | Package / Case [x] | Power Dissipation (Max) | Vgs (Max) | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | FET Type | Drain to Source Voltage (Vdss) | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | Surface Mount | -55 °C | 150 °C | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in | 2.5 W | 25 V | 12 mOhm | 4.5 V 10 V | 11 A | N-Channel | 30 V | 8-SOIC | 20 nC | 250 µA 800 mV |
Vishay General Semiconductor - Diodes Division | Surface Mount | -55 °C | 150 °C | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in | 2.5 W | 25 V | 12 mOhm | 4.5 V 10 V | 11 A | N-Channel | 30 V | 8-SOIC | 20 nC | 250 µA 800 mV |