SIS106 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 60V 9.8A/16A PPAK
| Part | Supplier Device Package | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Technology | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Mounting Type | Drain to Source Voltage (Vdss) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Rds On (Max) @ Id, Vgs [Max] | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | PowerPAK® 1212-8 | 4 V | 13.5 nC | MOSFET (Metal Oxide) | 3.2 W 24 W | 9.8 A 16 A | 10 V | 7.5 V | Surface Mount | 60 V | N-Channel | 540 pF | -55 °C | 150 °C | PowerPAK® 1212-8 | 18.5 mOhm | 20 V |