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Dual P-Channel Enhancement Mode MOSFET
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Dual P-Channel Enhancement Mode MOSFET
Dual P-Channel Enhancement Mode MOSFET
| Part | Mounting Type | Vgs (Max) | Drain to Source Voltage (Vdss) | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Technology | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Package / Case [y] | Package / Case [x] | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Power - Max [Max] | FET Feature | Gate Charge (Qg) (Max) @ Vgs [Max] | Configuration |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Diodes Inc | Surface Mount | 20 V | 30 V | P-Channel | -55 °C | 150 °C | 1.9 W | 5.6 A | 40 mOhm | MOSFET (Metal Oxide) | 29.6 nC | 8-SOIC | 3.9 mm | 0.154 in | 4.5 V 10 V | 1 V | 8-SO | 1022 pF | ||||
Diodes Inc | Surface Mount | 30 V | -55 °C | 150 °C | 4.2 A | 45 mOhm | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in | 1 V | 8-SO | 1022 pF | 1.8 W | Logic Level Gate | 29.6 nC | 2 P-Channel |