Catalog
650V 9A TO-263, High-speed switching Power MOSFET
Description
AI
R6509KNJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
Beta
⌘K
650V 9A TO-263, High-speed switching Power MOSFET
650V 9A TO-263, High-speed switching Power MOSFET
| Part | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Supplier Device Package | Package / Case | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs [Max] | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Technology | FET Type | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 5 V | 10 V | 540 pF | 650 V | 94 W | LPTS | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 9 A | 585 mOhm | 20 V | 16.5 nC | Surface Mount | MOSFET (Metal Oxide) | N-Channel | 150 °C |