Catalog
650V 24A TO-3PF, Low-noise Power MOSFET
Description
AI
R6524ENZ is a power MOSFET with low ON-resistance and fast switching, suitable for the switching application.
Beta
⌘K
650V 24A TO-3PF, Low-noise Power MOSFET
650V 24A TO-3PF, Low-noise Power MOSFET
| Part | Power Dissipation (Max) | Technology | Supplier Device Package | FET Type | Package / Case | Operating Temperature | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 74 W | MOSFET (Metal Oxide) | TO-3PF | N-Channel | TO-3P-3 Full Pack | 150 °C | Through Hole | 70 nC | 20 V | 4 V | 650 V | 24 A | 1650 pF | 185 mOhm | 10 V |