IS41LV16100 Series
Manufacturer: ISSI, Integrated Silicon Solution Inc
IC DRAM 16MBIT PARALLEL 42SOJ
| Part | Memory Type | Memory Format | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Memory Interface | Access Time | Memory Size | Package / Case | Package / Case [y] | Package / Case [y] | Memory Organization | Mounting Type | Voltage - Supply [Max] | Voltage - Supply [Min] | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solution Inc | Volatile | DRAM | 0 °C | 70 °C | 42-SOJ | Parallel | 25 ns | 2 MB | 42-BSOJ | 10.16 mm | 0.4 in | 1 M | Surface Mount | 3.6 V | 3 V | DRAM - EDO |
ISSI, Integrated Silicon Solution Inc | Volatile | DRAM | -40 ¯C | 85 C | 42-SOJ | Parallel | 25 ns | 2 MB | 42-BSOJ | 10.16 mm | 0.4 in | 1 M | Surface Mount | 3.6 V | 3 V | DRAM - EDO |
ISSI, Integrated Silicon Solution Inc | Volatile | DRAM | -40 ¯C | 85 C | 42-SOJ | Parallel | 25 ns | 2 MB | 42-BSOJ | 10.16 mm | 0.4 in | 1 M | Surface Mount | 3.6 V | 3 V | DRAM - EDO |
ISSI, Integrated Silicon Solution Inc | Volatile | DRAM | -40 ¯C | 85 C | 42-SOJ | Parallel | 25 ns | 2 MB | 42-BSOJ | 10.16 mm | 0.4 in | 1 M | Surface Mount | 3.6 V | 3 V | DRAM - EDO |
ISSI, Integrated Silicon Solution Inc | Volatile | DRAM | 0 °C | 70 °C | 42-SOJ | Parallel | 25 ns | 2 MB | 42-BSOJ | 10.16 mm | 0.4 in | 1 M | Surface Mount | 3.6 V | 3 V | DRAM - EDO |
ISSI, Integrated Silicon Solution Inc | Volatile | DRAM | -40 ¯C | 85 C | 44-TSOP II | Parallel | 25 ns | 2 MB | 44-TSOP (0.400" 10.16mm Width) | 1 M | Surface Mount | 3.6 V | 3 V | DRAM - EDO | ||
ISSI, Integrated Silicon Solution Inc | Volatile | DRAM | -40 ¯C | 85 C | 42-SOJ | Parallel | 25 ns | 2 MB | 42-BSOJ | 10.16 mm | 0.4 in | 1 M | Surface Mount | 3.6 V | 3 V | DRAM - EDO |
ISSI, Integrated Silicon Solution Inc | Volatile | DRAM | -40 ¯C | 85 C | 42-SOJ | Parallel | 25 ns | 2 MB | 42-BSOJ | 10.16 mm | 0.4 in | 1 M | Surface Mount | 3.6 V | 3 V | DRAM - EDO |
ISSI, Integrated Silicon Solution Inc | Volatile | DRAM | -40 ¯C | 85 C | 44-TSOP II | Parallel | 25 ns | 2 MB | 44-TSOP (0.400" 10.16mm Width) | 1 M | Surface Mount | 3.6 V | 3 V | DRAM - EDO | ||
ISSI, Integrated Silicon Solution Inc | Volatile | DRAM | -40 ¯C | 85 C | 42-SOJ | Parallel | 30 ns | 2 MB | 42-BSOJ | 10.16 mm | 0.4 in | 1 M | Surface Mount | 3.6 V | 3 V | DRAM - EDO |