SI4778 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 25V 8A 8SO
| Part | Rds On (Max) @ Id, Vgs | Supplier Device Package | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id [Max] | Drain to Source Voltage (Vdss) | FET Type | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | Package / Case | Package / Case [y] | Package / Case [x] | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 23 mOhm | 8-SOIC | 16 V | 8 A | 4.5 V 10 V | 680 pF | 2.2 V | 25 V | N-Channel | MOSFET (Metal Oxide) | -55 °C | 150 °C | 18 nC | 2.4 W 5 W | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount |