50 V, 500 mA PNP/PNP Resistor-Equipped double Transistor (RET); R1 = 2.2 kΩ, R2 = 10 kΩ
50 V, 500 mA PNP/PNP Resistor-Equipped double Transistor (RET); R1 = 2.2 kΩ, R2 = 10 kΩ
50 V, 500 mA PNP/PNP Resistor-Equipped double Transistor (RET); R1 = 2.2 kΩ, R2 = 10 kΩ
| Part | Mounting Type | Current - Collector (Ic) (Max) [Max] | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Voltage - Collector Emitter Breakdown (Max) [Max] | Package / Case | Power - Max [Max] | Supplier Device Package | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Current - Collector Cutoff (Max) [Max] | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | Surface Mount | 500 mA | 150 MHz | 2.2 kOhm | 10 kOhms | 50 V | 6-UFDFN Exposed Pad | 360 mW | 6-HUSON (2x2) | 2 PNP Pre-Biased (Dual) | 100 mV | 70 | 500 nA | ||
 Nexperia USA Inc. | Surface Mount | 500 mA | 150 MHz | 2.2 kOhm | 10 kOhms | 50 V | 6-UDFN Exposed Pad | 360 mW | DFN2020D-6 | 2 PNP Pre-Biased (Dual) | 100 mV | 70 | 500 nA | Automotive | AEC-Q101 |