SI4944 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET 2N-CH 30V 9.3A 8SOIC
| Part | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Technology | Configuration | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Package / Case | Package / Case [y] | Package / Case [x] | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | FET Feature | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 9.3 A | 8-SOIC | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 21 nC | 3 V | 30 V | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | -55 °C | 150 °C | Logic Level Gate | 9.5 mOhm |
Vishay General Semiconductor - Diodes Division | 9.3 A | 8-SOIC | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 21 nC | 3 V | 30 V | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | -55 °C | 150 °C | Logic Level Gate | 9.5 mOhm |