IRFI9630 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET P-CH 200V 4.3A TO220-3
| Part | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | FET Type | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Package / Case | Vgs (Max) | Rds On (Max) @ Id, Vgs | Technology | Drain to Source Voltage (Vdss) | Power Dissipation (Max) [Max] | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | TO-220-3 | 10 V | -55 °C | 150 °C | 29 nC | P-Channel | 4 V | 4.3 A | TO-220-3 Full Pack Isolated Tab | 20 V | 800 mOhm | MOSFET (Metal Oxide) | 200 V | 35 W | Through Hole | 700 pF |
Vishay General Semiconductor - Diodes Division | TO-220-3 | 10 V | -55 °C | 150 °C | 29 nC | P-Channel | 4 V | 4.3 A | TO-220-3 Full Pack Isolated Tab | 20 V | 800 mOhm | MOSFET (Metal Oxide) | 200 V | 35 W | Through Hole | 700 pF |