HFA06 Series

Manufacturer: Vishay General Semiconductor - Diodes Division

Catalog

DIODE GEN PURP 1.2KV 6A TO220AC

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Speed	Supplier Device Package	Current - Reverse Leakage @ Vr	Mounting Type	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Technology
Vishay General Semiconductor - Diodes Division VS-HFA06TB120PBF	150 °C	-55 °C	6 A	200 mA 500 ns	TO-220AC	5 µA	Through Hole	TO-220-2	1.2 kV	3 V	80 ns	Standard
Vishay General Semiconductor - Diodes Division HFA06TB120	150 °C	-55 °C	6 A	200 mA 500 ns	TO-220AC	5 µA	Through Hole	TO-220-2	1.2 kV	3 V	80 ns	Standard
Vishay General Semiconductor - Diodes Division VS-HFA06TB120SPBF	150 °C	-55 °C	6 A	200 mA 500 ns	TO-263AB (D2PAK)	5 µA	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1.2 kV	3 V	80 ns	Standard
Vishay General Semiconductor - Diodes Division HFA06PB120	150 °C	-55 °C	6 A	200 mA 500 ns	TO-247AC Modified	5 µA	Through Hole	TO-247-2	1.2 kV	3 V	80 ns	Standard
Vishay General Semiconductor - Diodes Division VS-HFA06TB120-M3	150 °C	-55 °C	6 A	200 mA 500 ns	TO-220AC	5 µA	Through Hole	TO-220-2	1.2 kV	3.9 V	80 ns	Standard
Vishay General Semiconductor - Diodes Division VS-HFA06TB120SL-M3	150 °C	-55 °C	6 A	200 mA 500 ns	TO-263AB (D2PAK)	5 µA	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1.2 kV	3.9 V	80 ns	Standard
Vishay General Semiconductor - Diodes Division VS-HFA06PB120-N3	150 °C	-55 °C	6 A	200 mA 500 ns	TO-247AC Modified	5 µA	Through Hole	TO-247-2	1.2 kV	3 V	80 ns	Standard
Vishay General Semiconductor - Diodes Division VS-HFA06TB120STRLP	150 °C	-55 °C	6 A	200 mA 500 ns	TO-263AB (D2PAK)	5 µA	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1.2 kV	3 V	80 ns	Standard
Vishay General Semiconductor - Diodes Division HFA06TB120S	150 °C	-55 °C	6 A	200 mA 500 ns	TO-263AB (D2PAK)	5 µA	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1.2 kV	3 V	80 ns	Standard