IHD260 Series
Manufacturer: POWER INTEGRATIONS
IC GATE DRVR HALF-BRIDGE MODULE
| Part | Gate Type | Channel Type | Rise / Fall Time (Typ) | Input Type | Mounting Type | Number of Drivers | Driven Configuration | Package / Case | Operating Temperature [Max] | Operating Temperature [Min] | Supplier Device Package | Voltage - Supply [Max] | Voltage - Supply [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
POWER INTEGRATIONS | IGBT MOSFET (N-Channel) N-Channel MOSFET | Independent | 80 ns 100 ns | Non-Inverting | Through Hole | 2 | Half-Bridge | 36-DIP Module 24 Leads | 85 C | -40 ¯C | Module | 16 V | 14 V |
POWER INTEGRATIONS | IGBT MOSFET (N-Channel) N-Channel MOSFET | Independent | 80 ns 100 ns | Inverting | Through Hole | 2 | Half-Bridge | 36-DIP Module 24 Leads | 85 C | -40 ¯C | Module | 16 V | 14 V |
POWER INTEGRATIONS | IGBT MOSFET (N-Channel) N-Channel MOSFET | Independent | 80 ns 100 ns | Inverting | Through Hole | 2 | Half-Bridge | 36-DIP Module 24 Leads | 85 C | -40 ¯C | Module | 16 V | 14 V |
POWER INTEGRATIONS | IGBT MOSFET (N-Channel) N-Channel MOSFET | Independent | 80 ns 100 ns | Non-Inverting | Through Hole | 2 | Half-Bridge | 36-DIP Module 24 Leads | 85 C | -40 ¯C | Module | 16 V | 14 V |
POWER INTEGRATIONS | IGBT MOSFET (N-Channel) N-Channel MOSFET | Independent | 80 ns 100 ns | Through Hole | 2 | Half-Bridge | 36-DIP Module 24 Leads | 85 C | -40 ¯C | Module | 16 V | 14 V |