MBR200200 Series
Manufacturer: GeneSiC Semiconductor
DIODE MOD SCHOT 200V 100A 2TOWER
| Part | Supplier Device Package | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Package / Case | Mounting Type | Voltage - Forward (Vf) (Max) @ If [Max] | Current - Average Rectified (Io) (per Diode) | Current - Reverse Leakage @ Vr | Technology | Voltage - DC Reverse (Vr) (Max) [Max] | Speed | Diode Configuration |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Twin Tower | -55 °C | 150 °C | Twin Tower | Chassis Mount | 920 mV | 100 A | 3 mA | Schottky | 200 V | 200 mA 500 ns | 1 Pair Common Anode |
GeneSiC Semiconductor | Twin Tower | -55 °C | 150 °C | Twin Tower | Chassis Mount | 920 mV | 100 A | 3 mA | Schottky | 200 V | 200 mA 500 ns | 1 Pair Common Cathode |