N-channel TrenchMOS standard level FET
N-channel TrenchMOS standard level FET
| Part | Drain to Source Voltage (Vdss) | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Qualification | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | FET Type | Power Dissipation (Max) | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 80 V | MOSFET (Metal Oxide) | 136 nC | AEC-Q101 | 120 A | 20 V | D2PAK | 175 °C | -55 °C | 10 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | Surface Mount | 10426 pF | 4.2 mOhm | N-Channel | 324 W | Automotive |