NSR20F40NX Series

Schottky Barrier Diode, 30 V, 2.0 A, Low IR

Catalog

Schottky Barrier Diode, 30 V, 2.0 A, Low IR

Part	Supplier Device Package	Supplier Device Package	Operating Temperature - Junction	Package / Case	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Speed	Current - Average Rectified (Io)	Mounting Type	Supplier Device Package
ON Semiconductor NSR20F40NXT5G	(0603)	2-DSN (1.6x0.8)	150 °C	0603 (1608 Metric)	Schottky	40 V	150 µA	550 mV	200 mA 500 ns	2 A	Surface Mount
ON Semiconductor NSR20F30NXT5G			150 °C	2-XDFN	Schottky	30 V	150 µA	480 mV	200 mA 500 ns	2 A	Surface Mount	2-DSN (1.6x.80)

Catalog

Schottky Barrier Diode, 30 V, 2.0 A, Low IR

Key Features

• Very Low Forward Voltage Drop 550 mV @ 2.0 A

• Low Reverse Current 15 A @ 10 V VR

• 2.0 A of Continuous Forward Current

• Power Dissipation of 665 mW with Minimum Trace

• ESD Rating Human Body Model: Class 3BESD Rating Machine Model: Class C

• Very High Switching Speed

• These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

Description

These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current and are offered in a Chip Scale Package (CSP) to reduce board space. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements.