SI4453 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET P-CH 12V 10A 8SO
| Part | Mounting Type | FET Type | Vgs (Max) | Vgs(th) (Max) @ Id | Supplier Device Package | Technology | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Package / Case | Package / Case [y] | Package / Case [x] | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | Surface Mount | P-Channel | 8 V | 900 mV | 8-SOIC | MOSFET (Metal Oxide) | 12 V | 1.5 W | 8-SOIC | 3.9 mm | 0.154 in | 165 nC | 10 A | -55 °C | 150 °C | 1.8 V 4.5 V |
Vishay General Semiconductor - Diodes Division | Surface Mount | P-Channel | 8 V | 900 mV | 8-SOIC | MOSFET (Metal Oxide) | 12 V | 1.5 W | 8-SOIC | 3.9 mm | 0.154 in | 165 nC | 10 A | -55 °C | 150 °C | 1.8 V 4.5 V |