SI4493 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET P-CH 20V 10A 8SO
| Part | Supplier Device Package | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Technology | Package / Case | Package / Case [y] | Package / Case [x] | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 8-SOIC | 1.5 W | -55 °C | 150 °C | P-Channel | 110 nC | 20 V | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | 2.5 V 4.5 V | 12 V | 7.75 mOhm | 10 A | 1.4 V |