IRF7822 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 30V 18A 8SO
| Part | FET Type | Mounting Type | Rds On (Max) @ Id, Vgs | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Package / Case [y] | Package / Case [x] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Technology | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | N-Channel | Surface Mount | 6.5 mOhm | 8-SOIC | -55 °C | 150 °C | 60 nC | 8-SOIC | 3.9 mm | 0.154 in | 5500 pF | MOSFET (Metal Oxide) | 4.5 V | 12 V | 30 V | 3.1 W | 1 V | 18 A |