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Nch 190V 10A Power MOSFET
Description
AI
RD3S100CN is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
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Nch 190V 10A Power MOSFET
Nch 190V 10A Power MOSFET
| Part | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Technology | Vgs (Max) | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Package / Case | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Supplier Device Package | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 182 mOhm | 2000 pF | 2.5 V | 10 A | MOSFET (Metal Oxide) | 20 V | 85 W | 190 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 4 V | 10 V | 52 nC | 150 °C | -55 °C | Surface Mount | TO-252 | N-Channel |