TLE2161A Series

Single, 36-V, 6.4-MHz operational amplifier

Catalog

Single, 36-V, 6.4-MHz operational amplifier

Part	Slew Rate	Voltage - Supply Span (Min) [Min]	Mounting Type	Voltage - Supply Span (Max) [Max]	Current - Input Bias	Voltage - Input Offset	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	Amplifier Type	Operating Temperature [Max]	Operating Temperature [Min]	Current - Output / Channel	Number of Circuits
Texas Instruments TLE2161AIDG4	10 V/çs	7 V	Surface Mount	36 V	4 pA	500 çV	8-SOIC	3.9 mm	0.154 in	8-SOIC	J-FET	85 °C	-40 °C	80 mA	1
Texas Instruments TLE2161AID	10 V/çs	7 V	Surface Mount	36 V	4 pA	500 çV	8-SOIC	3.9 mm	0.154 in	8-SOIC	J-FET	85 °C	-40 °C	80 mA	1
Texas Instruments TLE2161IDRG4	10 V/çs	7 V	Surface Mount	36 V	4 pA	600 µV	8-SOIC	3.9 mm	0.154 in	8-SOIC	J-FET	85 °C	-40 °C	80 mA	1
Texas Instruments TLE2161IDR	10 V/çs	7 V	Surface Mount	36 V	4 pA	600 µV	8-SOIC	3.9 mm	0.154 in	8-SOIC	J-FET	85 °C	-40 °C	80 mA	1
Texas Instruments TLE2161IDG4	10 V/çs	7 V	Surface Mount	36 V	4 pA	600 µV	8-SOIC	3.9 mm	0.154 in	8-SOIC	J-FET	85 °C	-40 °C	80 mA	1
Texas Instruments TLE2161CD	10 V/çs	7 V	Surface Mount	36 V	4 pA	600 µV	8-SOIC	3.9 mm	0.154 in	8-SOIC	J-FET	70 °C	0 °C	80 mA	1
Texas Instruments TLE2161AIDR	10 V/çs	7 V	Surface Mount	36 V	4 pA	500 çV	8-SOIC	3.9 mm	0.154 in	8-SOIC	J-FET	85 °C	-40 °C	80 mA	1

Catalog

Single, 36-V, 6.4-MHz operational amplifier

Key Features

• Excellent Output Drive CapabilityVO=± 2.5 V Min at RL= 100,VCC±= ± 5 VVO= ± 12.5 V Min at RL= 600,VCC±= ± 15 VLow Supply Current...280 uA TypDecompensated for High Slew Rate andGain-Bandwidth ProductAVD= 0.5 MinSlew Rate = 10 V/us TypGain-Bandwidth Product = 6.5 MHz TypWide Operating Supply Voltage RangeVCC±= ± 3.5 V to ± 18 VHigh Open-Loop Gain...280 V/mV TypLow Offset Voltage...500 uV MaxLow Offset Voltage Drift With Time0.04 uV/Month TypLow Input Bias Current...5 pA TypTLE2161, TLE2161A, TLE2161BEXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVEuPOWER OPERATIONAL AMPLIFIERSSLOS049D - NOVEMBER 1989 - REVISED MAY 1996Excellent Output Drive CapabilityVO=± 2.5 V Min at RL= 100,VCC±= ± 5 VVO= ± 12.5 V Min at RL= 600,VCC±= ± 15 VLow Supply Current...280 uA TypDecompensated for High Slew Rate andGain-Bandwidth ProductAVD= 0.5 MinSlew Rate = 10 V/us TypGain-Bandwidth Product = 6.5 MHz TypWide Operating Supply Voltage RangeVCC±= ± 3.5 V to ± 18 VHigh Open-Loop Gain...280 V/mV TypLow Offset Voltage...500 uV MaxLow Offset Voltage Drift With Time0.04 uV/Month TypLow Input Bias Current...5 pA TypTLE2161, TLE2161A, TLE2161BEXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVEuPOWER OPERATIONAL AMPLIFIERSSLOS049D - NOVEMBER 1989 - REVISED MAY 1996

Description

The TLE2161, TLE2161A, and TLE2161B are JFET-input, low-power, precision operational amplifiers manufactured using the Texas Instruments Excalibur process. Decompensated for stability with a minimum closed-loop gain of 5, these devices combine outstanding output drive capability with low power consumption, excellent dc precision, and high gain-bandwidth product. In addition to maintaining the traditional JFET advantages of fast slew rates and low input bias and offset currents, the Excalibur process offers outstanding parametric stability over time and temperature. This results in a device that remains precise even with changes in temperature and over years of use. The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2161ACDR). A variety of available options includes small-outline packages and chip-carrier versions for high-density system applications. The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C. The TLE2161, TLE2161A, and TLE2161B are JFET-input, low-power, precision operational amplifiers manufactured using the Texas Instruments Excalibur process. Decompensated for stability with a minimum closed-loop gain of 5, these devices combine outstanding output drive capability with low power consumption, excellent dc precision, and high gain-bandwidth product. In addition to maintaining the traditional JFET advantages of fast slew rates and low input bias and offset currents, the Excalibur process offers outstanding parametric stability over time and temperature. This results in a device that remains precise even with changes in temperature and over years of use. The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2161ACDR). A variety of available options includes small-outline packages and chip-carrier versions for high-density system applications. The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C.