IRF840 Series

Manufacturer: Vishay General Semiconductor - Diodes Division

Catalog

MOSFET N-CH 500V 8A D2PAK

Part	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Package / Case	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Vgs(th) (Max) @ Id	Technology
Vishay General Semiconductor - Diodes Division IRF840ASPBF	1018 pF	TO-263 (D2PAK)	850 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	8 A	-55 °C	150 °C	3.1 W 125 W	Surface Mount	10 V	38 nC	500 V	30 V	4 V	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRF840ASTRL	1018 pF	TO-263 (D2PAK)	850 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	8 A	-55 °C	150 °C	3.1 W 125 W	Surface Mount	10 V	38 nC	500 V	30 V	4 V	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRF840ASTRR	1018 pF	TO-263 (D2PAK)	850 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	8 A	-55 °C	150 °C	3.1 W 125 W	Surface Mount	10 V	38 nC	500 V	30 V	4 V	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRF840LCSPBF	1100 pF	TO-263 (D2PAK)	850 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	8 A	-55 °C	150 °C	3.1 W 125 W	Surface Mount	10 V	39 nC	500 V	30 V	4 V	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRF840LCS	1100 pF	TO-263 (D2PAK)	850 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	8 A	-55 °C	150 °C	3.1 W 125 W	Surface Mount	10 V	39 nC	500 V	30 V	4 V	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRF840LPBF	1300 pF	TO-263 (D2PAK)	850 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	8 A	-55 °C	150 °C	125 W	Surface Mount	10 V	63 nC	500 V	20 V	4 V	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRF840STRLPBF	1300 pF	TO-263 (D2PAK)	850 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	8 A	-55 °C	150 °C	3.1 W 125 W	Surface Mount	10 V	63 nC	500 V	20 V	4 V	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRF840APBF-BE3	1018 pF	TO-220AB	850 mOhm	TO-220-3	N-Channel	8 A	-55 °C	150 °C	125 W	Through Hole	10 V	38 nC	500 V	30 V	4 V	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRF840AS	1018 pF	TO-263 (D2PAK)	850 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	8 A	-55 °C	150 °C	3.1 W 125 W	Surface Mount	10 V	38 nC	500 V	30 V	4 V	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRF840A	1018 pF	TO-220AB	850 mOhm	TO-220-3	N-Channel	8 A	-55 °C	150 °C	125 W	Through Hole	10 V	38 nC	500 V	30 V	4 V	MOSFET (Metal Oxide)