SIHF23 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 600V 23A TO220
| Part | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Supplier Device Package | Package / Case | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) [Max] | Current - Continuous Drain (Id) @ 25°C | Technology | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | N-Channel | 2418 pF | 30 V | TO-220 Full Pack | TO-220-3 Full Pack | Through Hole | -55 °C | 150 °C | 95 nC | 4 V | 600 V | 10 V | 35 W | 23 A | MOSFET (Metal Oxide) | 158 mOhm |