SIHG11 Series

Catalog

MOSFET N-CH 800V 8A TO247AC

Part	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Technology	FET Type
Vishay General Semiconductor - Diodes Division SIHG11N80AE-GE3	78 W	450 mOhm	10 V	-55 °C	150 °C	8 A	30 V	Through Hole	4 V	800 V	804 pF	TO-247-3	42 nC	TO-247AC	MOSFET (Metal Oxide)	N-Channel