Catalog
Single N-Channel Power MOSFET 30V, 115A, 2.9mΩ
Key Features
• Low Capacitance
• Low RDS(on)
• Optimized Gate Charge
• Thermally Enhanced SO-8 Package
Description
AI
Power MOSFET 30 V, 115 A, Single N-Channel, SO-8 FL
Beta
⌘K
Single N-Channel Power MOSFET 30V, 115A, 2.9mΩ
Single N-Channel Power MOSFET 30V, 115A, 2.9mΩ
| Part | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs [Max] | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Technology | Vgs (Max) | Package / Case | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | 2.5 V | 2.9 mOhm | 62.5 W 890 mW | 4.5 V 10 V | 3720 pF | 62 nC | 5-DFN (5x6) | 8-SOFL | 13.7 A 115 A | N-Channel | -55 °C | 150 °C | 30 V | MOSFET (Metal Oxide) | 16 V | 8-PowerTDFN 5 Leads | Surface Mount |