SIB488 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 12V 9A PPAK SC75-6
| Part | Mounting Type | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Vgs (Max) | FET Type | Rds On (Max) @ Id, Vgs [Max] | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | Surface Mount | 1 V | 12 V | 725 pF | 1.8 V 4.5 V | PowerPAK® SC-75-6 | MOSFET (Metal Oxide) | -55 °C | 150 °C | 2.4 W 13 W | 20 nC | PowerPAK® SC-75-6 | 8 V | N-Channel | 20 mOhm | 9 A |