2SK2719 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
MOSFET N-CH 900V 3A TO3P
| Part | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Drain to Source Voltage (Vdss) | FET Type | Technology | Operating Temperature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 25 nC | 30 V | 10 V | Through Hole | 900 V | N-Channel | MOSFET (Metal Oxide) | 150 °C | 125 W | 4.3 Ohm | 750 pF | 3 A | TO-3P(N) | SC-65-3 TO-3P-3 |