TSM2N100 Series
Manufacturer: Taiwan Semiconductor Corporation
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⌘K
MOSFET N-CH 1000V 1.85A TO252
| Part | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Technology | Supplier Device Package | Package / Case | Operating Temperature [Max] | Operating Temperature [Min] | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | FET Type | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Taiwan Semiconductor Corporation | 5.5 V | 77 W | 8.5 Ohm | 10 V | 1000 V | Surface Mount | 1.85 A | MOSFET (Metal Oxide) | TO-252 (DPAK) | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 150 °C | -55 °C | 30 V | 17 nC | N-Channel | 625 pF |