8EWS08 Series

Catalog

DIODE GEN PURP 800V 8A D-PAK

Part	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Package / Case	Mounting Type	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Technology	Speed	Current - Average Rectified (Io)	Speed
Vishay General Semiconductor - Diodes Division VS-8EWS08STRLPBF	25 ns	800 V	TO-252AA (DPAK)	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	50 µA	150 °C	-55 °C	1.1 V	Standard	200 mA 500 ns	8 A
Vishay General Semiconductor - Diodes Division VS-8EWS08STRL-M3		800 V	TO-252AA (DPAK)	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	50 µA	150 °C	-55 °C	1.1 V	Standard	200 mA 500 ns	8 A
Vishay General Semiconductor - Diodes Division 8EWS08STRR		800 V	TO-252AA (DPAK)	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	50 µA	150 °C	-55 °C	1.1 V	Standard	200 mA	8 A	Standard Recovery >500ns
Vishay General Semiconductor - Diodes Division 8EWS08S		800 V	TO-252AA (DPAK)	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	50 µA	150 °C	-55 °C	1.1 V	Standard	200 mA	8 A	Standard Recovery >500ns
Vishay General Semiconductor - Diodes Division VS-8EWS08STRRPBF		800 V	TO-252AA (DPAK)	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	50 µA	150 °C	-55 °C	1.1 V	Standard	200 mA	8 A	Standard Recovery >500ns
Vishay General Semiconductor - Diodes Division VS-8EWS08SPBF		800 V	TO-252AA (DPAK)	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	50 µA	150 °C	-55 °C	1.1 V	Standard	200 mA	8 A	Standard Recovery >500ns