SICB1060 Series

Catalog

DIODE SIL CARBIDE 650V 10A D2PAK

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Supplier Device Package	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Speed	Technology	Current - Average Rectified (Io)
MCC (Micro Commercial Components) SICB1060P-TP	175 ░C	-55 °C	36 pF	650 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	44 µA	0 ns	1.6 V	Surface Mount	500 mA	SiC (Silicon Carbide) Schottky	10 A
MCC (Micro Commercial Components) SICB1060P-TP	175 ░C	-55 °C	36 pF	650 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	44 µA	0 ns	1.6 V	Surface Mount	500 mA	SiC (Silicon Carbide) Schottky	10 A