IRF9530 Series

Catalog

MOSFET P-CH 100V 12A D2PAK

Part	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Vgs (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	FET Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Power Dissipation (Max) [Max]
Vishay General Semiconductor - Diodes Division IRF9530STRRPBF	-55 °C	175 ░C	860 pF	100 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	TO-263 (D2PAK)	12 A	MOSFET (Metal Oxide)	38 nC	300 mOhm	P-Channel	4 V	10 V	3.7 W 88 W
Vishay General Semiconductor - Diodes Division IRF9530S	-55 °C	175 ░C	860 pF	100 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	TO-263 (D2PAK)	12 A	MOSFET (Metal Oxide)	38 nC	300 mOhm	P-Channel	4 V	10 V	3.7 W 88 W
Vishay General Semiconductor - Diodes Division IRF9530L	-55 °C	175 ░C	860 pF	100 V	Through Hole	I2PAK TO-262-3 Long Leads TO-262AA	20 V	I2PAK	12 A	MOSFET (Metal Oxide)	38 nC	300 mOhm	P-Channel	4 V	10 V
Vishay General Semiconductor - Diodes Division IRF9530PBF-BE3	-55 °C	175 ░C	860 pF	100 V	Through Hole	TO-220-3	20 V	TO-220AB	12 A	MOSFET (Metal Oxide)	38 nC	300 mOhm	P-Channel	4 V			88 W
Vishay General Semiconductor - Diodes Division IRF9530STRL	-55 °C	175 ░C	860 pF	100 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	TO-263 (D2PAK)	12 A	MOSFET (Metal Oxide)	38 nC	300 mOhm	P-Channel	4 V	10 V	3.7 W 88 W