SI4966 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET 2N-CH 20V 8SOIC
| Part | FET Feature | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Power - Max [Max] | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Configuration | Mounting Type | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Package / Case [y] | Package / Case [x] | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | Logic Level Gate | 1.5 V | 20 V | 2 W | MOSFET (Metal Oxide) | -55 °C | 150 °C | 2 N-Channel (Dual) | Surface Mount | 25 mOhm | 50 nC | 8-SOIC | 3.9 mm | 0.154 in | 8-SOIC |