1N8030 Series
Manufacturer: GeneSiC Semiconductor
Beta
⌘K
DIODE SCHOTTKY 650V 0.75A 3-PIN(3+TAB) TO-257 ISOLATED
| Part | Capacitance @ Vr, F | Mounting Type | Speed | Current - Average Rectified (Io) | Current - Reverse Leakage @ Vr | Reverse Recovery Time (trr) | Voltage - Forward (Vf) (Max) @ If | Technology | Voltage - DC Reverse (Vr) (Max) [Max] | Package / Case | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 GeneSiC Semiconductor | 76 pF | Through Hole | 500 mA | 750 mA | 5 µA | 0 ns | 1.39 V | SiC (Silicon Carbide) Schottky | 650 V | TO-257-3 | -55 °C | 250 °C | TO-257 |