SIDR220 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 25V 87.7A/100A PPAK
| Part | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | FET Type | Vgs (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 25 V | 5.8 mOhm | -55 °C | 150 °C | 6.25 W 125 W | 87.7 A 100 A | 2.1 V | PowerPAK® SO-8DC | 4.5 V 10 V | PowerPAK® SO-8 | N-Channel | -12 V 16 V | 1085 pF | 200 nC | Surface Mount | MOSFET (Metal Oxide) |