SI7629 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET P-CH 20V 35A PPAK1212-8
| Part | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Technology | Package / Case | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | FET Type | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 20 V | -55 °C | 150 °C | 3.7 W 52 W | 10 V | 2.5 V | 5790 pF | 4.6 mOhm | MOSFET (Metal Oxide) | PowerPAK® 1212-8 | 35 A | Surface Mount | PowerPAK® 1212-8 | 177 nC | 12 V | P-Channel | 1.5 V |