FQU12N20 Series

N-Channel QFET® MOSFET 200V, 9.0A, 280mΩ

Catalog

N-Channel QFET® MOSFET 200V, 9.0A, 280mΩ

Part	Package / Case	Vgs(th) (Max) @ Id	FET Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Technology	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)
ON Semiconductor FQU12N20TU	IPAK TO-251-3 Short Leads TO-251AA	5 V	N-Channel	30 V	200 V	MOSFET (Metal Oxide)	Through Hole	23 nC	IPAK	280 mOhm	-55 °C	150 °C	910 pF	10 V	9 A	2.5 W 55 W

Catalog

N-Channel QFET® MOSFET 200V, 9.0A, 280mΩ

Key Features

• 9A, 200V, RDS(on)= 280mΩ(Max.) @VGS= 10 V, ID= 4.5A

• Low Gate Charge ( Typ. 18nC)

• Low Crss( Typ. 18pF)

• 100% Avalanche Tested

• RoHS compliant

Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts..