GD60 Series
Manufacturer: GeneSiC Semiconductor
DIODE SIL CARB 1.7KV 122A TO247
| Part | Voltage - Forward (Vf) (Max) @ If [Max] | Current - Average Rectified (Io) | Voltage - DC Reverse (Vr) (Max) [Max] | Supplier Device Package | Capacitance @ Vr, F | Technology | Mounting Type | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Current - Reverse Leakage @ Vr | Speed | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 1.8 V | 122 A | 1700 V | TO-247-2 | 4577 pF | SiC (Silicon Carbide) Schottky | Through Hole | 175 ░C | -55 °C | 40 µA | 200 mA 500 ns | TO-247-2 |