
TPS50601-SP Series
Radiation-hardened QMLV, 3-V to 6.3-V input, 6-A synchronous step-down converter
Manufacturer: Texas Instruments
Catalog
Radiation-hardened QMLV, 3-V to 6.3-V input, 6-A synchronous step-down converter
Key Features
• 5962R10221:Radiation Hardness Assurance (RHA) up to TID 100 krad (Si)ELDRS Free 100 krad (Si) – 10 mRAD(Si)/sSingle Event Latchup (SEL) Immune toLET = 85 MeV-cm2/mg (See Radiation Report, http://www.ti.com/radiation)SEB and SEGR Immune to 85 MeV-cm2/mg, SOA Curve Available (See Radiation Report)SET/SEFI Cross-Section Plot Available (See Radiation Report)Peak Efficiency: 95% (VO= 3.3 V)Integrated 55-mΩ/50-mΩ MOSFETsSplit Power Rail: 1.6 to 6.3 V on PVINPower Rail: 3 to 6.3 V on VIN6-A Maximum Output CurrentFlexible Switching Frequency Options:100-kHz to 1-MHz Adjustable Internal OscillatorExternal Sync Capability: 100 kHz to 1 MHzSync Pin can be Configured as a 500-kHz Output for Master/Slave Applications0.795-V ±1.258% Voltage Reference at 25°CMonotonic Start-Up into Prebiased OutputsAdjustable Soft Start Through External CapacitorInput Enable and Power-Good Output for Power SequencingPower Good Output Monitor for Undervoltage and OvervoltageAdjustable Input Undervoltage Lockout (UVLO)20-Pin Thermally-Enhanced Ceramic Flatpack Package (HKH)See www.ti.com/swift for SWIFT DocumentationSee the Tools & Software Tab5962R10221:Radiation Hardness Assurance (RHA) up to TID 100 krad (Si)ELDRS Free 100 krad (Si) – 10 mRAD(Si)/sSingle Event Latchup (SEL) Immune toLET = 85 MeV-cm2/mg (See Radiation Report, http://www.ti.com/radiation)SEB and SEGR Immune to 85 MeV-cm2/mg, SOA Curve Available (See Radiation Report)SET/SEFI Cross-Section Plot Available (See Radiation Report)Peak Efficiency: 95% (VO= 3.3 V)Integrated 55-mΩ/50-mΩ MOSFETsSplit Power Rail: 1.6 to 6.3 V on PVINPower Rail: 3 to 6.3 V on VIN6-A Maximum Output CurrentFlexible Switching Frequency Options:100-kHz to 1-MHz Adjustable Internal OscillatorExternal Sync Capability: 100 kHz to 1 MHzSync Pin can be Configured as a 500-kHz Output for Master/Slave Applications0.795-V ±1.258% Voltage Reference at 25°CMonotonic Start-Up into Prebiased OutputsAdjustable Soft Start Through External CapacitorInput Enable and Power-Good Output for Power SequencingPower Good Output Monitor for Undervoltage and OvervoltageAdjustable Input Undervoltage Lockout (UVLO)20-Pin Thermally-Enhanced Ceramic Flatpack Package (HKH)See www.ti.com/swift for SWIFT DocumentationSee the Tools & Software Tab
Description
AI
The TPS50601-SP is a radiation hardened, 6.3-V, 6-A synchronous step-down converter, which is optimized for small designs through high efficiency and integrating the high-side and low-side MOSFETs. Further space savings are achieved through current mode control, which reduces component count, and a high switching frequency, reducing the inductor's footprint. The devices are offered in a thermally enhanced 20-pin ceramic, dual in-line flatpack package.
The output voltage startup ramp is controlled by the SS/TR pin which allows operation as either a stand alone power supply or in tracking situations. Power sequencing is also possible by correctly configuring the enable and the open drain power good pins.
Cycle-by-cycle current limiting on the high-side FET protects the device in overload situations and is enhanced by a low-side sourcing current limit which prevents current runaway. There is also a low-side sinking current limit which turns off the low-side MOSFET to prevent excessive reverse current. Thermal shutdown disables the part when die temperature exceeds thermal shutdown temperature.
The TPS50601-SP is a radiation hardened, 6.3-V, 6-A synchronous step-down converter, which is optimized for small designs through high efficiency and integrating the high-side and low-side MOSFETs. Further space savings are achieved through current mode control, which reduces component count, and a high switching frequency, reducing the inductor's footprint. The devices are offered in a thermally enhanced 20-pin ceramic, dual in-line flatpack package.
The output voltage startup ramp is controlled by the SS/TR pin which allows operation as either a stand alone power supply or in tracking situations. Power sequencing is also possible by correctly configuring the enable and the open drain power good pins.
Cycle-by-cycle current limiting on the high-side FET protects the device in overload situations and is enhanced by a low-side sourcing current limit which prevents current runaway. There is also a low-side sinking current limit which turns off the low-side MOSFET to prevent excessive reverse current. Thermal shutdown disables the part when die temperature exceeds thermal shutdown temperature.