FFPF08S60S Series

8A, 600V, STEALTH™ II Diode

Catalog

8A, 600V, STEALTH™ II Diode

Part	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Current - Reverse Leakage @ Vr	Speed	Supplier Device Package	Current - Average Rectified (Io)	Technology
ON Semiconductor FFPF08S60STU	2.6 V	30 ns	Through Hole	600 V	175 ░C	-65 C	TO-220-2 Full Pack	100 µA	200 mA 500 ns	TO-220F-2L	8 A	Avalanche

Catalog

8A, 600V, STEALTH™ II Diode

Key Features

• Stealth recovery Trr= 30ns (@IF= 8A)

• Max Forward Voltage, VF= 2.6V (@ TC= 25°C)

• 600V Reverse Voltage and High Reliability

• Avalanche Energy Rated

• RoHS compliant

Description

The FFPF08S60S is STEALTH™ II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.