FDD86567_F085 Series

N-Channel PowerTrench® MOSFET 60 V, 100 A, 3.2 mΩ

Catalog

N-Channel PowerTrench® MOSFET 60 V, 100 A, 3.2 mΩ

Part	Qualification	Vgs(th) (Max) @ Id	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	FET Type	Mounting Type	Grade	Technology	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FDD86567-F085	AEC-Q101	4 V	20 V	10 V	TO-252AA	-55 °C	175 ░C	4950 pF	60 V	227 W	100 A	3.2 mOhm	N-Channel	Surface Mount	Automotive	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	82 nC

N-Channel PowerTrench® MOSFET 60 V, 100 A, 3.2 mΩ

• Typical RDS(on)= 2.6 mΩ at VGS= 10V, ID= 80 A

• Typical Qg(tot) = 63 nC at VGS= 10V, ID= 80 A

• UIS Capability

• RoHS Compliant

• Qualified to AEC Q101

N-Channel PowerTrench®MOSFET 60 V, 100 A, 3.2 mΩ